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BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Power dissipation. Production specification 2SC2715 Pb Lead-free APPLICATIONS Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2715 Marking RR1/RO1/RY1 Package Code SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 35 30 4 50 150 -55~150 Units V V V mA mW ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSTC099 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Test conditions IC=10A,IE=0 IC=1mA,IB=0 B Production specification 2SC2715 MIN 35 30 4 0.1 0.1 40 240 0.4 1 100 400 V V MHz TYP MAX UNIT V V V A A IE=10A,IC=0 VCB=35V,IE=0 VEB=4V,IC=0 VCE=12V,IC=2mA IC=10mA, IB=1mA B IC=10mA, IB=1mA B VCE=10V, IC= 1mA CLASSIFICATION Rank Range Marking OF R 40-80 RR1 hFE(1) O 70-140 RO1 Y 120-240 RY1 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document number: BL/SSSTC099 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package A E Production specification 2SC2715 SOT-23 SOT-23 Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45 K B 1.0Typical D G J E G H H C J K 0.1Typical All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE Device 2SC2715 INFORMATION Package SOT-23 Shipping 3000/Tape&Reel Document number: BL/SSSTC099 Rev.A www.galaxycn.com 3 |
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